Semiconductors
To authors
Volumes and Issues
- 2023
- 2022
The Excitation Efficiency for Dislocation-Related Luminescence Centers in Silicon with Oxygen Precipitates
Effect of the pump power on the photoluminescence intensity for dislocation-related luminescence centers is studied in p-type silicon containing oxygen precipitates. Oxygen precipitates are induced as a result of three-stage annealing used for formation of a getter for fast diffusing impurities in microelectronics technology while D1 and D2 dislocation-related luminescence centers were produced during subsequent annealing in a flow of argon at 1000oC. The photoluminescence excitation efficiencies for the D1 and D2 lines were measured at a temperature of liquid helium. Keywords: dislocation-related luminescence, silicon, oxygen precipitates, photoluminescence excitation efficiency.
- N.A. Drozdov, A.A. Patrin, V.D. Tkachev. JETP Lett., 23, 597 (1976)
- V. Kveder, V. Badylevich, E. Steinman, A. Izotov, M. Zeibt, W. Schreter. Appl. Phys. Lett., 84, 2106 (2004)
- E.O. Sveinbjornsson, J. Weber. Appl. Phys. Lett., 69, 2686 (1996)
- M. Kittler, X. Yu, T. Mchedlidze, T. Arguirov, O.F. Vyvenko, W. Seifert, M. Reiche, T. Wilhelm, M. Seibt, O. Vob, A. Wolff, W. Fritzsche. Small, 3, 964 (2007)
- N.A. Sobolev, A.M. Emel'yanov, V.V. Zabrodskii, N.V. Zabrodskaya, V.L. Sukhanov, E.I. Shek. Semiconductors, 41 (5), 616 (2007)
- N.A. Sobolev, A.E. Kalyadin, M.V. Konovalov, P.N. Aruev, V.V. Zabrodskiy, E.I. Shek, K.F. Shtel'makh, A.N. Mikhaylov, D.I. Tetel'baum. Semiconductors, 50 (2), 240 (2016)
- N.A. Sobolev. Semiconductors, 44 (1), 1 (2010)
- S. Binetti, S. Pizzini, E. Leoni, R. Somaschini, A. Castaldini, A. Cavallini. J. Appl. Phys., 92, 2437 (2002)
- K. Bothe, R.J. Falster, J.D. Murphy. Appl. Phys. Lett., 101, 032107 (2012)
- S. Binetti, R. Somaschini, A. Le Donne, E. Leoni, S. Pizzini, D. Li, D. Yang. J. Phys.: Condens. Matter, 14, 13247 (2002)
- V.I. Vdovin, L.I. Fedina, A.K. Gutakovskii, A.E. Kalyadin, E.I. Shek, K.F. Shtel'makh, N.A. Sobolev. Crystallography Reports, 66 (4), 625 (2021)
- G. Davies. Phys. Reports, 176, 83 (1989)
- N.A. Sobolev, A.E. Kalyadin, K.F. Shtel'makh, E.I. Shek. Semiconductors, 55 (10), 1208 (2021)
- N.A. Sobolev. Intrinsic point defect engineering in silicon high-voltage power device technology. Chap. 5 in Semiconductor Technology: Processing and Novel Fabrication Techniques, ed. by M. Levinshtein, M. Shur (Wiley-Interscience, N. Y., USA, 1997) p. 131
- N.A. Sobolev, O.B. Gusev, E.I. Shek, V.I. Vdovin, T.G. Yugova, A.M. Emel'yanov. Appl. Phys. Lett., 72, 3326 (1998)
Подсчитывается количество просмотров абстрактов ("html" на диаграммах) и полных версий статей ("pdf"). Просмотры с одинаковых IP-адресов засчитываются, если происходят с интервалом не менее 2-х часов.
Дата начала обработки статистических данных - 27 января 2016 г.