文章摘要
张文博,王华,许积文,刘国保,谢航,杨玲.铋掺杂对SrTiO3薄膜微观结构及阻变行为的影响[J].材料导报,2018,32(11):1932-1937
铋掺杂对SrTiO3薄膜微观结构及阻变行为的影响
Effects of Bismuth Doping Concentration on Microstructure and Resistance Switching Behavior of SrTiO3 Films
  
DOI：10.11896/j.issn.1005-023X.2018.11.023
中文关键词: 溶胶-凝胶 钛酸锶薄膜 Ag/Sr1-xBixTiO3/p+-Si 铋掺杂 阻变特性 阻变存储器(RRAM)
英文关键词: sol-gel, strontium titanate film, Ag/Sr1-xBixTiO3/p+-Si, bismuth doping, resistance switching characteristic, resistance-switching random access memory (RRAM)
基金项目:基金项目:国家自然科学基金(51262003);广西自然科学基金(2015GXNSFAA139253)
作者单位E-mail
张文博 桂林电子科技大学材料科学与工程学院,桂林 541004 365299466@qq.com,wh65@guet.edu.cn 
王华 桂林电子科技大学材料科学与工程学院,桂林 541004  
许积文 桂林电子科技大学材料科学与工程学院,桂林 541004  
刘国保 桂林电子科技大学材料科学与工程学院,桂林 541004  
谢航 桂林电子科技大学材料科学与工程学院,桂林 541004  
杨玲 桂林电子科技大学材料科学与工程学院,桂林 541004  
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中文摘要:
      采用溶胶-凝胶及快速退火工艺在p+-Si上制备了Bi掺杂SrTiO3薄膜,构建了Ag/Sr1-xBixTiO3/p+-Si结构阻变器件,研究了Bi掺杂量对薄膜微观结构、器件阻变行为及特性的影响。结果表明:Bi掺杂量较低时并未改变Sr1-xBixTiO3薄膜的相结构,但随着掺杂比例的增大,晶粒尺寸也明显增大,当掺杂量x=0.16时,有Bi4SrTi4O15及TiO2相形成；不同Bi掺杂量的Ag/Sr1-xBixTiO3/p+-Si器件均呈现出双极性阻变特性,且有明显的多级阻变行为。随Bi掺杂量的增加,器件的阻变性能逐步提高,当x=0.12时器件的高、低阻态电阻比值最大,达到105左右,并且在2 000次可逆循环测试下,高、低阻态电阻比未出现衰减,表现出良好的抗疲劳特性,但当掺杂量x达到或超过0.16后,器件的性能呈下降趋势。Bi掺杂量的增大会导致器件高阻态时的导电机制从空间电荷效应(SCLC)导电机制(x＜0.16)转变为肖特基势垒发射(x=0.16)。器件在低阻态下均遵循欧姆导电机制。
英文摘要:
      A series of bismuth-ion-doped SrTiO3 thin films were deposited on p+-Si substrates via a sol-gel process and the subsequent rapid annealing technique, to fabricate the sandwich structures of Ag/Sr1-xBixTiO3/p+-Si for resistance-switching device. The effects of Bi-ion doping concentration on microstructure of the thin film, and resistance switching behavior of Ag/Sr1-x-BixTiO3/p+-Si devices were investigated. The results showed that a low amount of Bi causes no change in the phase structure of Sr1-xBixTiO3 thin films, but an obvious increment of grain size can be observed with the increasing Bi doping content. The Bi4SrTi4O15 and TiO2 phases will form when the doping amount is x=0.16. All of the Ag/Sr1-xBixTiO3/p+-Si devices exhibit bipolar resistive and multi-level resistance switching behaviors. The increasing Bi doping concentration also leads to a biphasic (increase→decrease) change in the device’s resistance switching property;when x=0.12 the device shows the maximum high/low resistance ratio of 105 and better reading endurance after 2 000 cycles, but the device performance decays while x=0.16. This can be explained by the change of dominant conduction mechanism under HRS (high resistance state) induced by Bi doping, from space charge limited current (SCLC) (x＜0.16) to Schottky barrier emission (x=0.16). All the devices conduct current in accordance with the filamentary theory under LRS (low resistance state).
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