Spin-Dependent Transport in Molecular Tunnel Junctions

J. R. Petta, S. K. Slater, and D. C. Ralph
Phys. Rev. Lett. 93, 136601 – Published 20 September 2004

Abstract

We present measurements of magnetic tunnel junctions made using a self-assembled-monolayer molecular barrier. Ni-octanethiol-Ni samples were fabricated in a nanopore geometry. The devices exhibit significant changes in resistance as the angle between the magnetic moments in the two electrodes is varied, demonstrating that low-energy electrons can traverse the molecular barrier while remaining spin polarized. An analysis of the voltage and temperature dependence of the data suggests that the spin-polarized transport signals can be degraded by localized states in the molecular barriers.

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  • Received 30 April 2004

DOI:https://doi.org/10.1103/PhysRevLett.93.136601

©2004 American Physical Society

Authors & Affiliations

J. R. Petta*, S. K. Slater, and D. C. Ralph

  • Laboratory of Atomic and Solid State Physics, Cornell University, Ithaca, New York 14853, USA

  • *Present address: Physics Department, Harvard University, Cambridge, MA 02138

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Vol. 93, Iss. 13 — 24 September 2004

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