Abstract
Multilayer van der Waals (vdW) film materials have attracted extensive interest from the perspective of both fundamental research1,2,3 and technology4,5,6,7. However, the synthesis of large, thick, single-crystal vdW materials remains a great challenge because the lack of out-of-plane chemical bonds weakens the epitaxial relationship between neighbouring layers8,9,10,11,12,13,14,15,16,17,18,19,20,21,22,23,24,25,26,27,28,29,30,31. Here we report the continuous epitaxial growth of single-crystal graphite films with thickness up to 100,000 layers on high-index, single-crystal nickel (Ni) foils. Our epitaxial graphite films demonstrate high single crystallinity, including an ultra-flat surface, centimetre-size single-crystal domains and a perfect AB-stacking structure. The exfoliated graphene shows excellent physical properties, such as a high thermal conductivity of ~2,880 W m−1 K−1, intrinsic Young’s modulus of ~1.0 TPa and low doping density of ~2.2 × 1010 cm−2. The growth of each single-crystal graphene layer is realized by step edge-guided epitaxy on a high-index Ni surface, and continuous growth is enabled by the isothermal dissolution–diffusion–precipitation of carbon atoms driven by a chemical potential gradient between the two Ni surfaces. The isothermal growth enables the layers to grow at optimal conditions, without stacking disorders or stress gradients in the final graphite. Our findings provide a facile and scalable avenue for the synthesis of high-quality, thick vdW films for various applications.
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Source data are provided with this paper. The data that support the findings of this study are available within the paper and Supplementary Information. Additional data are available from the corresponding authors upon reasonable request.
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Acknowledgements
This work was supported by Guangdong Major Project of Basic and Applied Basic Research (2021B0301030002 (Enge Wang and Kaihui Liu)), the National Natural Science Foundation of China (52025023 (Kaihui Liu), 51991342 (Kaihui Liu), 52021006 (Kaihui Liu), 11888101 (Enge Wang), 92163206 (M.W.), 52172035 (M.W.), 52125307 (P.G.) and T2188101 (Kaihui Liu)), the Key R&D Programme of Guangdong Province (2019B010931001 (Kaihui Liu) and 2018B030327001 (D.Y.)), the National Key R&D Programme of China (2021YFB3200303 (Kaihui Liu), 2021YFA1400502 (M.W.)), the Strategic Priority Research Programme of Chinese Academy of Sciences (XDB33000000 (Kaihui Liu)), Beijing Natural Science Foundation (JQ19004 (Kaihui Liu)), the Tencent Foundation through the XPLORER PRIZE (Kaihui Liu) and the Institute for Basic Science of South Korea (IBS-R019-D1 (F.D.)). We acknowledge the use of the IBS-CMCM high-performance computing system simulator.
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Kaihui Liu and Enge Wang supervised the project. Kaihui Liu conceived the experiments. F.D., Enge Wang and Kaihui Liu developed the growth mechanism. D.Y. organized the structural characterization. Zhibin Zhang and M.D. synthesized the epitaxial graphite film. T.C. and F.D. performed the theoretical analysis. X.B., Zhibin Zhang, R.Q., M.Z., X.L., F.L., Zhihong Zhang, D.Z., C.L., M.W., X.W. and P.G. performed the SEM, TEM, EBSD and X-ray diffraction experiments. Zhibin Zhang, M.D., Y.F. and Kehai Liu performed the thermal conductivity measurements. Kai Liu, Q.L., Enze Wang, Y.S. and S.Z. performed the mechanical experiments. Y.Z. and M.L. performed the electronic transport experiment. Q.Z., Zhibin Zhang, H.M. and C.F. performed the chlorination experiment. All authors discussed the results and contributed to writing the paper.
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Zhang, Z., Ding, M., Cheng, T. et al. Continuous epitaxy of single-crystal graphite films by isothermal carbon diffusion through nickel. Nat. Nanotechnol. 17, 1258–1264 (2022). https://doi.org/10.1038/s41565-022-01230-0
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DOI: https://doi.org/10.1038/s41565-022-01230-0
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