Abstract
Semiconductor nanowires show promise for use in nanoelectronics, fundamental electron transport studies, quantum optics and biological sensing. Such applications require a high degree of nanowire growth control, right down to the atomic level. However, many binary semiconductor nanowires exhibit a high density of randomly distributed twin defects and stacking faults, which results in an uncontrolled, or polytypic, crystal structure. Here, we demonstrate full control of the crystal structure of InAs nanowires by varying nanowire diameter and growth temperature. By selectively tuning the crystal structure, we fabricate highly reproducible polytypic and twin-plane superlattices within single nanowires. In addition to reducing defect densities, this level of control could lead to bandgap engineering and novel electronic behaviour.
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Acknowledgements
The authors thank J. Bolinsson, J. B. Wagner, T. Mårtensson and other colleagues at the Nanometer Structure Consortium for many valuable discussions. K. Nilsson and H. Nilsson are acknowledged for producing electron-beam lithography patterns as templates for ordered arrays of twin-plane superlattice nanowires. This work was carried out within the Nanometer Structure Consortium in Lund and was supported by the Swedish Foundation for Strategic Research (SSF), the Swedish Research Council (VR), the European Community (EU contract no. 015783 NODE) and the Knut and Alice Wallenberg Foundation.
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P.C. and K.A.D. conceived, designed and performed the experiments and co-wrote the paper. J.J. and M.E.M. contributed materials and analysis tools. K.D. and L.S. supervised the project. All authors discussed the results and commented on the manuscript.
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Caroff, P., Dick, K., Johansson, J. et al. Controlled polytypic and twin-plane superlattices in iii–v nanowires. Nature Nanotech 4, 50–55 (2009). https://doi.org/10.1038/nnano.2008.359
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DOI: https://doi.org/10.1038/nnano.2008.359
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