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Temperature Effects on Singularity Matching and Parity in a Superconducting Single-Electron Transistor

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Abstract

In this paper, we present results demonstrating the effect of temperature on singularity matching (SM) tunneling down to 300 mK in superconducting single-electron transistors (SSETs). The studied SSETs have charging energies significantly larger than the Josephson energy, which makes it possible to study the SM condition without other sub-superconducting gap conduction mechanisms obscuring the SM signatures at low biases. The presence of parity in one such device has also allowed us to explore the effect of temperature on the effect of parity on SM features.

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Acknowledgements

This material is based upon work supported by the National Science Foundation Graduate Research Fellowship Program under Grant No. ECCS-1509087. Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation.

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Authors and Affiliations

  1. Electrical Engineering Department, University of Notre Dame, Notre Dame, IN, 46556, USA

    Thomas A. Zirkle, Rachel A. Bonek, Gregory L. Snider & Alexei O. Orlov

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  1. Thomas A. Zirkle
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  2. Rachel A. Bonek
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  3. Gregory L. Snider
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  4. Alexei O. Orlov
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Correspondence to Thomas A. Zirkle.

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Zirkle, T.A., Bonek, R.A., Snider, G.L. et al. Temperature Effects on Singularity Matching and Parity in a Superconducting Single-Electron Transistor. J Low Temp Phys 195, 419–428 (2019). https://doi.org/10.1007/s10909-019-02176-9

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