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Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas

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Silicon Carbide

Part of the book series: Advanced Texts in Physics ((ADTP))

Abstract

Presently, SiC devices are implemented in homoepitaxial films grown on large 4H- and 6H-SiC wafers cut from large SiC boules and with surfaces polished 3°–8° off-axis from the (0001) basal plane. This conventional approach has been largely unable to prevent many substrate crystal defects from propagating into SiC epilayers where they have been shown to harm the performance of the electronic devices. Furthermore, this approach has also not supported the implementation of potentially useful SiC heterojunction devices.

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Authors and Affiliations

  1. NASA Glenn Research Center, Sest, Inc., 21000 Brookpark Rd., M.S. 77-1, Cleveland, OH, 44135, USA

    P. G. Neudeck & J. A. Powell

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  1. P. G. Neudeck
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  2. J. A. Powell
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Editors and Affiliations

  1. Department of Physics and Astronomy, University of Pittsburgh, Pittsburgh, PA, 15260, USA

    W. J. Choyke

  2. Department of Electronic Science and Engineering Yoshidahonmachi, Kyoto University, Sakyo, Kyoto, 606-8501, Japan

    H. Matsunami

  3. Institute of Applied Physics, University of Erlangen-Nürnberg, Staudtstrasse 7/A3, 91058, Erlangen, Germany

    G. Pensl

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Neudeck, P.G., Powell, J.A. (2004). Homoepitaxial and Heteroepitaxial Growth on Step-Free SiC Mesas. In: Choyke, W.J., Matsunami, H., Pensl, G. (eds) Silicon Carbide. Advanced Texts in Physics. Springer, Berlin, Heidelberg. https://doi.org/10.1007/978-3-642-18870-1_8

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  • DOI: https://doi.org/10.1007/978-3-642-18870-1_8

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