Band structure characterization of K8Ga8Si38 clathrates by optical measurement

Masaru Iioka; Haruhiko Udono; Motoharu Imai; Masato Aoki

doi:10.56646/jjapcp.3.0_011201

International Conference and Summer School on Advanced Silicide Technology 2014

Session ID : 011201

DOI https://doi.org/10.56646/jjapcp.3.0_011201

Conference information

Host: The Japan Society of Applied Physics

Name : International Conference and Summer School on Advanced Silicide Technology 2014

Location : Tokyo, Japan

Date : July 19, 2014 - July 21, 2014

Thermoelectric materials

Band structure characterization of K₈Ga₈Si₃₈ clathrates by optical measurement

Masaru Iioka, Haruhiko Udono, Motoharu Imai, Masato Aoki

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CONFERENCE PROCEEDINGS OPEN ACCESS

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Abstract

We have investigated the band structure of K₈Ga₈Si₃₈ clathrates by using optical reflectance measurements and first-principle calculations based on the density functional theory. The imaginary part of the dielectric function ε₂ was calculated from the normal reflectance spectrum via the Kramers–Kronig analysis. The experimental ε₂ values showed a fundamental absorption edge near 1 eV. From the analysis of the absorption spectrum, we found that the value of the absorption edge energy is approximately 1.2 eV for a K₈Ga₈Si₃₈ clathrate crystal.

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