Abstract
To evaluate the leakage current around through-silicon-vias (TSVs) in three-dimensional integrated circuits (3D-ICs), we propose the use of the IR-optical-beam-induced resistance change (IR-OBIRCH) method, which enables point detection of leakage currents. Leakage currents were detected directly from cross-sectional TSV samples to give more detailed information than can be obtained from conventional nondestructive top-view observations. Local leakage currents between Cu vias and the Si substrate resulted from poor sidewall coverage of the insulator, and were monitored with an image map and found to be 100 nA. Cross-sectional OBIRCH is suited for point leakage current measurements and for optimizing the metallization process of TSVs.
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