Graphene is a monolayer graphite sheet which consists of sp² carbon. Since it was isolated in 2004, it has been expected to be used as a new material for various applications such as semiconductors and transparent electrodes due to its attractive properties. High throughput synthesis methods are urgently required for industrial application. Therefore, some synthesis methods such as chemical vapor deposition (CVD) on metals and epitaxial growth on SiC have been developed. In terms of high yield and easiness, chemical exfoliation via graphene oxide (GO) is the most appropriate method. We can obtain plenty of monolayer sheets on many kinds of substrates by this method. In addition, the size of the GO sheets is more than 100 µm. However, the quality of graphene produced from graphene oxide is quite low compared with graphene synthesized by other methods. Therefore, many researchers have tried to improve its quality using various methods. This review introduces some results for the high throughput synthesis of graphene from GO explaining the advantages and disadvantages of each method.