Ion channeling measurements of β-FeSi2 films epitaxially grown on Si(111) and their analysis by multiple scattering theory

Masaya Fuchi; Mikihiro Arima; Kazumasa Narumi; Yoshikazu Terai; Yoshihito Maeda

doi:10.56646/jjapcp.5.0_011104

Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Session ID : 011104

DOI https://doi.org/10.56646/jjapcp.5.0_011104

Conference information

Host: The Japan Society of Applied Physics

Name : Asia-Pacific Conference on Semiconducting Silicides and Related Materials - Science and Technology Towards Sustainable Electronics (APAC Silicide 2016)

Location : Fukuoka, Japan

Date : July 16, 2016 - July 18, 2016

Light emission and detection materials

Ion channeling measurements of β-FeSi₂ films epitaxially grown on Si(111) and their analysis by multiple scattering theory

Masaya Fuchi, Mikihiro Arima, Kazumasa Narumi, Yoshikazu Terai, Yoshihito Maeda

Author information

CONFERENCE PROCEEDINGS OPEN ACCESS

Details

Abstract

We have evaluated β-FeSi₂ (110), (101) planes epitaxially grown on Si(111) by using ion beam analysis. Unexpected large displacements were deduced from analysis based on single ion scattering. We have discussed multiple ion scattering caused inside the film and obtained the comparatively reasonable atomic displacement of Δx = 0.04 nm that is close to one sixth of one step height of six domains stacking on the (111) planes. This result suggests that multiple scattering may be attributed to the atomic displacement due to the domain stacking faults.

Corresponding author

Register with J-STAGE for free!