The presence of defect clusters in multicrystalline silicon – not only in compensated silicon – can influence the electronic properties of solar cells. This is due to the interfered further crystallization and an insufficient passivation of the defects in these regions. Three-dimensional plots, based on hundreds of electroluminescence images, allow an improved analysis of the defect clusters’ growth during crystallization. Furthermore, this allows vertical views from any angle which is otherwise only possible with destructive vertical cuts.