Title | Simulation of the Dislocation Density During Multicrystalline Silicon Ingot Growth |
Author(s) | René Helbig, Claudia Funke, Hans Joachim Möller |
Keywords | Simulation, Dislocation, Multicrystalline-Silicon |
Topic | Wafer-Based Silicon Solar Cells and Materials Technology |
Subtopic | Silicon Feedstock, Crystallisation and Wafering |
Event | 26th EU PVSEC |
Session | 2BV.4.51 |
Pages manuscript | 1938 - 1941 |
ISBN | 3-936338-27-2 |
DOI | 10.4229/26thEUPVSEC2011-2BV.4.51 |
In order to determine the influence of grain boundaries and grain orientations on the generation and multiplication of dislocations in multicrystalline silicon, a model of the dislocation generation has been designed and numerically solved. Based on the Alexander-Haasen-Sumino model, which has been used earlier to calculate the dislocation density, it is developed further and takes into account the multiplication of dislocations in different glide systems, their interaction and the annihilation. This model has been solved numerically with the help of the multiphysical software Elmer. A three-dimensional model of a multicrystalline silicon ingot has been created to show the influence of the different grain orientations. It is shown that there exist grain orientations, which yield higher dislocation densities, and that these dislocations are preferentially located near grain boundaries.