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TitleSimulation of the Dislocation Density During Multicrystalline Silicon Ingot Growth
Author(s)René Helbig, Claudia Funke, Hans Joachim Möller
KeywordsSimulation, Dislocation, Multicrystalline-Silicon
TopicWafer-Based Silicon Solar Cells and Materials Technology
SubtopicSilicon Feedstock, Crystallisation and Wafering
Event26th EU PVSEC
Session2BV.4.51
Pages manuscript 1938 - 1941
ISBN3-936338-27-2
DOI10.4229/26thEUPVSEC2011-2BV.4.51
Abstract/Summary

In order to determine the influence of grain boundaries and grain orientations on the generation and multiplication of dislocations in multicrystalline silicon, a model of the dislocation generation has been designed and numerically solved. Based on the Alexander-Haasen-Sumino model, which has been used earlier to calculate the dislocation density, it is developed further and takes into account the multiplication of dislocations in different glide systems, their interaction and the annihilation. This model has been solved numerically with the help of the multiphysical software Elmer. A three-dimensional model of a multicrystalline silicon ingot has been created to show the influence of the different grain orientations. It is shown that there exist grain orientations, which yield higher dislocation densities, and that these dislocations are preferentially located near grain boundaries.

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