Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Viktoryia Uhnevionak; Alex Burenkov; Christian Strenger; Vincent Mortet; Elena Bedel-Pereira; Fuccio Cristiano; Anton J. Bauer; Peter Pichler

doi:10.4028/www.scientific.net/MSF.778-780.483

Paper Titles

Improved Analytical Expressions for Avalanche Breakdown in 4H-SiC
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High-Resolution Raman and Luminescence Spectroscopy of Isotope-Pure ²⁸Si¹²C, Natural and ¹³C – Enriched 4H-SiC
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Carrier Density Dependence of Fano Type Interference in Raman Spectra of p-type 4H-SiC
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Crystallographic Structure of 8H- and 10H-SiC Analyzed by Raman Spectroscopy and Diffraction Methods
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Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs
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Temperature and Electrical Field Dependence of the Ambipolar Mobility in N-Doped 4H-SiC
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High-Sensitivity High-Resolution Full-Wafer Imaging of the Properties of Large n-Type SiC Using the Relative Reflectance of Two Terahertz Waves
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Theoretical Investigation of the Single Photon Emitter Carbon Antisite-Vacancy Pair in 4H-SiC
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First Principles Investigation of Divacancy in SiC Polytypes for Solid State Qubit Application
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HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Hall Factor Calculation for the Characterization...

Hall Factor Calculation for the Characterization of Transport Properties in N-Channel 4H-SiC MOSFETs

Abstract:

For the characterization of n-channel 4H-SiC MOSFETs, current-voltage and Hall-effect measurements were carried out at room temperature. To interpret the Hall-effect measurements, the Hall factor for the electron transport in the channel of SiC MOSFETs was evaluated, for the first time. The method of the Hall factor calculation is based on the interdependence with mobility components via the respective scattering relaxation times. The results of the calculation reveal a strong dependence of the Hall factor on the gate voltage. Depending on the gate voltage applied, the values of the Hall factor vary between 1.3 and 1.5. Sheet carrier density and drift mobility values derived from the Hall-effect measurements using our new gate-voltage-dependent Hall factor show very good agreement with simulations performed with Sentaurus Device of Synopsys.

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

483-486

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.483

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Online since:

February 2014

Authors:

Viktoryia Uhnevionak*, Alex Burenkov, Christian Strenger, Vincent Mortet, Elena Bedel-Pereira, Fuccio Cristiano, Anton J. Bauer, Peter Pichler

Keywords:

Hall Factor, Hall-Effect Measurements, N-Channel 4H-SiC MOSFETs

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