A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA

Woong Je Sung; B.J. Baliga; Alex Q. Huang

doi:10.4028/www.scientific.net/MSF.717-720.1045

Paper Titles

Characterization of SiC JFET in Novel Packaging for 1 MHz Operation
p.1029

Packaging Technologies for 500°C SiC Electronics and Sensors
p.1033

High Voltage SiC Vertical JFET for High Power RF Applications
p.1037

Design of an Integrated SiC JFET Power Switch and Flyback Diode
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A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA
p.1045

Fabrication Issues of 4H-SiC Static Induction Transistors
p.1049

High Performance SiC IEMOSFET/SBD Module
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Development of 1200 V, 3.7 mΩ-cm² 4H-SiC DMOSFETs for Advanced Power Applications
p.1059

High-Temperature Performance of 1200 V, 200 A 4H-SiC Power DMOSFETs
p.1065

HomeMaterials Science ForumMaterials Science Forum Vols. 717-720A Novel 4H-SiC Fault Isolation Device with...

A Novel 4H-SiC Fault Isolation Device with Improved Trade-Off between On-State Voltage Drop and Short Circuit SOA

Abstract:

This paper aims to introduce a solid-state fault isolation device (FID) for the short circuit protection application in the power distribution systems. The key performance of a FID is to have a low on-state loss and a strong short circuit safe operating area (SCSOA). As a FID, a novel 15kV 4H-SiC field controlled diode (FCD) with a p+buried layer is proposed to provide an improved trade-off between the on-state forward voltage drop and the saturation current. Dynamic response to the fault and the application example of the proposed FCD are described in this paper.