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Theoretical Studies for Si and C Emission into SiC Layer during Oxidation

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Abstract:

To understand the structure of SiC–oxide interface more in detail, we propose a profiling theory of Si and C emission into SiC layer during oxidation. Simulations of the depth profiles of Si and C interstitials results in the structures analogous with those observed from a spectroscopic ellipsometry. To determine the diffusivities of Si and C interstitials, we performed capacitance–voltage measurements for examining the re-distribution profiles of nitrogen after oxidation and compared between observed and calculated profile. The calculated nitrogen profiles showed good fits to the observed ones in the case of self-diffusivity of C interstitials magnified by several 10 times for literature value. Finally, we discuss the validity of the proposed theory.

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Periodical:

Materials Science Forum (Volumes 679-680)

Pages:

429-432

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.679-680.429

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Online since:

March 2011

Authors:

Yasuto Hijikata, Hiroyuki Yaguchi, Sadafumi Yoshida

Keywords:

C Emission, Diffusivity, Interstitial, MOS Structure, Oxidation, Si Emission, SiC-Oxide Interface

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