Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems

D. Holec; Colin J. Humphreys

doi:10.4028/www.scientific.net/MSF.567-568.209

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HomeMaterials Science ForumMaterials Science Forum Vols. 567-568Calculations of Equilibrium Critical Thickness for...

Calculations of Equilibrium Critical Thickness for Non-Polar Wurtzite InGaN/GaN Systems

Abstract:

We investigate critical thicknesses of InGaN epilayers grown on GaN substrates with the growth-plane not being the c-plane. In particular, we focus on non-polar orientations with growth planes being the m- and a-planes. We have taken into account the proper hexagonal symmetry of wurtzite GaN. We have found that there is only a small difference in the critical thickness for the cplane and the a-plane material; however, in the case of the m-plane material, we predict a quite different behaviour along the (in-plane) c-axis and the perpendicular (in-plane) a-direction.

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Periodical:

Materials Science Forum (Volumes 567-568)

Pages:

209-212

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.567-568.209

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Online since:

December 2007

Authors:

D. Holec, Colin J. Humphreys

Keywords:

Critical Thickness, InGaN, Non-Polar, Wurtzite

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