The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition

Y. Sun; J. Swerts; P. Verdonck; A. Maheshwari; J.L. Prado; S. de Feyter; S. Armini

doi:10.4028/www.scientific.net/SSP.195.146

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HomeSolid State PhenomenaSolid State Phenomena Vol. 195The Effect of Ar/H2 Plasma Pretreatments on Porous...

The Effect of Ar/H2 Plasma Pretreatments on Porous K=2.0 Dielectrics for Pore Sealing by Self-Assembled Monolayers Deposition

Abstract:

Self-assembled monolayers (SAMs) deposition is being recently explored to help sealing the pores of a k=2.0 material. In order to enable a covalent chemical low-k surface functionalization by SAMs, a hydroxyl groups density as high as 1 to 2.5 OH groups/nm² is required. This surface modification must be carefully controlled to confine the k below 10%. In this paper, the effects of plasma temperature, time and power on the SAMs deposition and plasma-induced damage are investigated. The main findings are that there is always a trade-off between surface hydroxyl groups density and bulk damage. A thick modified layer allows the SAM molecules to penetrate inside the pores which results in a decreased porosity and an increased k value with respect to correspondent plasma-treated pristine substrates.

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Periodical:

Solid State Phenomena (Volume 195)

Pages:

146-149

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.195.146

Citation:

Cite this paper

Online since:

December 2012

Authors:

Y. Sun, J. Swerts, P. Verdonck, A. Maheshwari, J.L. Prado, S. de Feyter, S. Armini

Keywords:

Low-k Dielectrics, Plasma Damage, Plasma Treatments, Pore Sealing, Precursor Penetration, Self-Assembled Monolayer (SAM), Surface Modification

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