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HomeSolid State PhenomenaSolid State Phenomena Vols. 178-179Reconstruction of a High Angle Tilt (110)/(001)...

Reconstruction of a High Angle Tilt (110)/(001) Boundary in Si Using O-lattice Theory

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Abstract:

High angle close to 90° tilt Si boundary created by direct wafer bonding (DWB) using SmartCut® technology is studied in this work. Experimental identification of defects and morphologies at the interface is realized using conventional transmission electron microscopy (TEM) and geometric phase analysis (GPA) of high-resolution TEM images. Atom reconstruction of the interface along the direction is carried out within the frame of the O-lattice theory. We demonstrate that to preserve covalent bonding across the interface it should consist of facets intersected by a maximum of six planes with three 90° Shockley dislocations per facet. For a long enough interface the formation of Frank dislocations is predicted with a period equal 6 times that of Shockley dislocations. Long range undulations of the interface are shown to be related directly to a deviation from exact 90° tilt of the layer with respect to the substrate.

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Gettering and Defect Engineering in Semiconductor Technology XIV

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Periodical:

Solid State Phenomena (Volumes 178-179)

Pages:

489-494

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.178-179.489

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Online since:

August 2011

Authors:

Nikolay Cherkashin, Oleg Kononchuk, Martin Hÿtch

Keywords:

90° High Angle Grain Boundary, Direct Wafer Bonding, Dislocation, Interface, O-Lattice Theory, Silicon

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