Current Status of Graphene Transistors

M.C. Lemme

doi:10.4028/www.scientific.net/SSP.156-158.499

Paper Titles

Investigation of the Mechanical Properties of Thin Films by Bulge Test
p.477

Defect Characterization of Poly-Ge and VFG-Grown Ge Material
p.483

Cathodoluminescence of SiO₂/Si System
p.487

Correlation Study of Morphology, Electrical Activation and Contact formation of Ion Implanted 4H-SiC
p.493

Current Status of Graphene Transistors
p.499

Theoretical Study of Ionized Impurities in Silicon Nanowire MOS Transistors
p.511

Scaling in Quantum Transport in Silicon Nano-Transistors
p.517

Anisotropic Strain – Anisotropic Heating Engineering for Silicon Nanocrystals in SiO₂
p.523

Silicon Cluster Aggregation in Silica Layers
p.529

HomeSolid State PhenomenaSolid State Phenomena Vols. 156-158Current Status of Graphene Transistors

Current Status of Graphene Transistors

Abstract:

This paper reviews the current status of graphene transistors as potential supplement to silicon CMOS technology. A short overview of graphene manufacturing and metrology methods is followed by an introduction of macroscopic graphene field effect transistors (FETs). The absence of an energy band gap is shown to result in severe shortcomings for logic applications. Possibilities to engineer a band gap in graphene FETs including quantum confinement in graphene Nanoribbons (GNRs) and electrically or substrate induced asymmetry in double and multi layer graphene are discussed. Novel switching mechanisms in graphene transistors are briefly introduced that could lead to future memory devices. Finally, graphene FETs are shown to be of interest for analog radio frequency applications.