Low Temperature O2 Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator

J.W. Roh; J.S. Yang; S.H. Ok; Deok Ha Woo; Young Tae Byun; Young Min Jhon; Tetsuya Mizumoto; Woo Young Lee; Seok Lee

doi:10.4028/www.scientific.net/SSP.124-126.475

Paper Titles

Synthesis and Fabrication of Novel Polymeric/Organic Materials for Micro/Nano-Scale Optical Printed Circuit Board and VLSI Photonic Integrated Circuit Application
p.459

Post-Annealing Effect of SiON Thin Film in Air
p.463

Comparison of Natural Type Ia Diamond and CVD Diamond Films by Photoluminescence
p.467

Luminescent Properties in NIR Region of LaPO₄:Er/LaPO₄ Core/Shell Nanoparticles
p.471

Low Temperature O₂ Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator
p.475

Preparation and Property of Nonlinear Optical Materials Based on K₂O-BaO-TiO₂-SiO₂ Glasses
p.479

Investigation of Thermal Measurement Variables in High Power GaN-Based LEDs
p.483

Preparation and Characterization of 70TeO₂-30WO₃ Glass Thin Films by Radio-Frequency Magnetron Sputtering Method
p.487

Detection of Toxic Organophosphate Nerve Agents Using DBR Porous Silicon Chip
p.491

HomeSolid State PhenomenaSolid State Phenomena Vols. 124-126Low Temperature O2 Plasma-Assisted Wafer Bonding...

Low Temperature O₂ Plasma-Assisted Wafer Bonding of InP and a Garnet Crystal for an Optical Waveguide Isolator

Abstract:

A novel process of wafer bonding between InP and a garnet crystal (Gd3Ga5O12, CeY2Fe5O12) based on O2 plasma surface-activation and low temperature heat treatment is presented. The O2 plasma assisted wafer bonding process was found to be very effective in bonding of InP and Gd3Ga5O12, providing good bonding strength and hydrophilicity as well as no voids in the interface, which is crucial for fabrication of an integrated optical waveguide isolator. The isolation ratio of an integrated optical waveguide isolator fabricated by the O2 plasma assisted wafer bonding process was obtained to be 2.9 dB.

You might also be interested in these eBooks

Advances in Nanomaterials and Processing

View Preview

Info:

Periodical:

Solid State Phenomena (Volumes 124-126)

Pages:

475-478

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.124-126.475

Citation:

Cite this paper

Online since:

June 2007

Authors:

J.W. Roh, J.S. Yang, S.H. Ok, Deok Ha Woo, Young Tae Byun, Young Min Jhon, Tetsuya Mizumoto, Woo Young Lee, Seok Lee

Keywords:

Garnet, Hydrophylic Surface, Optical Wave Guide Isolator, Plasma Surface Activation, Wafer Bonding

Export:

RIS, BibTeX

Price:

Permissions:

Request Permissions

References

[1] H. Yokoi, T. Mizumoto, et al, Jpn. J. Appl. Phys., Vol. 38 (1999), p.195.

Google Scholar

[2] T. Akatsu, A. Plössl, R. Scholz, and U. M. Gösele, J. Appl. Phys., Vol. 90 (2001), p.3856.

Google Scholar

[3] Q. -Y. Tong, U. M. Gösele: Semiconductor Wafer Bonding (John Wiley & Sons, Inc , 1999).

Google Scholar

[4] S. N. Farrens, J. R. Dekker, and B. E. Roberds, J. Electrochem. Soc., Vol. 142 (1995), p.3949.

Google Scholar

[5] T. Suni, K. Henttinen, I. Suni , and J. Mäkinen: J. Electrochem. Soc. Vol. 149 (6)(2002), G348.

DOI: 10.1149/1.1477209

Google Scholar

[6] H. Yokoi, T. Mizumoto, et al, IEE Proc. -optoelectron., vol. 146(2) (1999), p.105.

Google Scholar

[7] X. Zhang and J. P. Raskin, Electrochemical and Solid-State Letters, Vol. 7 (8), G172.

Google Scholar

[8] M. Totoki, T. mizumoto, T. Nakamura, K. Maru, Y. Naito, Jpn. J. Appl. Phys., Vol. 34 (1995), p.510 InP Ce: YIG Bonded MMI Section InP Ce: YIG Bonded MMI Section InP Ce: YIG InP Ce: YIG Bonded MMI Section Bonded MMI Section.

DOI: 10.1143/jjap.34.510

Google Scholar