Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation

Matthaeus Albrecht; Tobias Erlbacher; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.963.827

Paper Titles

Industrial and Body Diode Qualification of Gen-III Medium Voltage SiC MOSFETs: Challenges and Solutions
p.805

Demonstration of 4H-SiC JFET Digital ICs Across 1000°C Temperature Range without Change to Input Voltages
p.813

A Monolithic 500°C D-Flip Flop Realized in Bipolar 4H-SiC TTL Technology
p.818

A Study on Fastening the Switching Speed for Wide Bandgap Semiconductor Based Super Cascode
p.823

Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation
p.827

High Temperature High Current Gain IC Compatible 4H-SiC Phototransistor
p.832

4H-SiC Trench pMOSFETs for High-Frequency CMOS Inverters
p.837

SiC Vertical-Channel n- and p-JFETs Fully Fabricated by Ion Implantation
p.841

Improved Offset Voltage Stability of 4H-SiC CMOS Operational Amplifier by Increasing Gamma Irradiation Resistance
p.845

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Improving 5V Digital 4H-SiC CMOS ICs for Operating at 400°C Using PMOS Channel Implantation

Abstract:

In this work, the impact of a shallow aluminum channel implantation on the channel properties of SiC p-MOSFETs and digital SiC CMOS devices is investigated. For this purpose, p-MOSFETs, CMOS inverters and ring oscillators with different channel implantation doses were fabricated and electrically characterized. The threshold voltage of the resulting p-MOSFETs was shifted from-5 V to-3.6 V whereas the effective channel mobility was slightly decreased from 11.8 cm2/Vs to 10.2 cm2/Vs for a p-MOSFET channel implantation dose of 2∙10¹³ cm^-2 compared to the non-implanted channel. The resulting p-MOSFETs enable SiC CMOS logic circuits to operate with a 5 V power supply and to satisfy 5 V TTL input level specification over the whole temperature range of 25°C to 400°C. Furthermore the propagation delay time of inverters was reduced by 80% at 25°C and 40% at 400°C compared to inverters without p-MOSFET channel implantation.