Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

Ajit Kanale; B. Jayant Baliga; Ki Jeong Han; Subhashish Bhattacharya

doi:10.4028/www.scientific.net/MSF.963.625

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HomeMaterials Science ForumMaterials Science Forum Vol. 963Experimental Study of High-Temperature Switching...

Experimental Study of High-Temperature Switching Performance of 1.2kV SiC JBSFET in Comparison with 1.2kV SiC MOSFET

Abstract:

The high-temperature switching performance of a 1.2kV SiC JBSFET is compared with a 1.2kV SiC MOSFET using a clamped inductive load switching circuit representing typical H-bridge inverters. The switching losses of the SiC MOSFET are also evaluated with a SiC JBS Diode connected antiparallel to it. Measurements are made with different high-side and low-side device options across a range of case temperatures. The JBSFET is observed to display a reduction in peak turn-on current – up to 18.9% at 150°C and a significantly lesser turn-on switching loss – up to 46.6% at 150°C, compared to the SiC MOSFET.

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Periodical:

Materials Science Forum (Volume 963)

Pages:

625-628

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.963.625

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Online since:

July 2019

Authors:

Ajit Kanale*, B. Jayant Baliga, Ki Jeong Han, Subhashish Bhattacharya

Keywords:

High-Temperature Switching, JBSFET, Power MOSFET, Silicon Carbide, Third Quadrant

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