Preface, Committees, Sponsors
Bulk Growth of Large Area SiC Crystals
p.5
p.5
Large Area 4H SiC Products for Power Electronic Devices
p.11
p.11
Using Ray Tracing Simulations for Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC c-Plane Wafers Grown by PVT Method
p.15
p.15
Trials of Solution Growth of Dislocation-Free 4H-SiC Bulk Crystals
p.19
p.19
Developing Technologies of SiC Gas Source Growth Method
p.23
p.23
Limitations in Very Fast Growth of 4H-SiC Crystals by High-Temperature Gas Source Method
p.29
p.29
High Temperature Solution Growth of SiC by the Vertical Bridgman Method Using a Metal Free Si-C-Melt at 2300 °C
p.33
p.33
Effect of Aluminum during the High Temperature Solution Growth of Si-Face 4H-SiC
p.37
p.37
Bulk Growth of Large Area SiC Crystals
Abstract:
The growth of large diameter silicon carbide (SiC) crystals produced by the physical vapor transport (PVT) method is outlined. Methods to increase the crystal diameters, and to turn these large diameter crystals into substrates that are ready for the epitaxial growth of SiC or other non homogeneous epitaxial layers are discussed. We review the present status of 150 mm and 200 mm substrate quality at Cree, Inc. in terms of crystallinity, dislocation density as well as the final substrate surface quality.
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volume 858)
Pages:
5-10
Citation:
Online since:
May 2016
Authors:
Price:
Permissions: