Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)

Stefan Hertel; Andreas Finkler; M. Krieger; Heiko B. Weber

doi:10.4028/www.scientific.net/MSF.821-823.933

Paper Titles

High-Temperature Operation of Electrostatically-Excited Single-Crystalline 4H-SiC Microcantilever Resonators
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Pressureless Ag Thin-Film Die-Attach for SiC Devices
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Nanoscale Dynamic Mechanical Analysis on Heat-Resistant Silsesquioxane Nanocomposite for Power-Device Packaging
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Electrical Properties of Hydrogen Intercalated Epitaxial Graphene/SiC Interface Investigated by Nanoscale Current Mapping
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Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)
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Electrical Characterization of Epitaxial Graphene Field-Effect Transistors with High-k Al₂O₃ Gate Dielectric Fabricated on SiC Substrates
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Realization and Characterization of Graphene on 4H-SiC for Tera-Hertz Transistors
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RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates
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A Study on Graphitization of 4H-SiC(0001) Surface under Low Pressure Oxygen Atmosphere and Effects of Pre-Oxidation Treatment
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HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Graphene Ohmic Contacts to n-Type Silicon Carbide...

Graphene Ohmic Contacts to n-Type Silicon Carbide (0001)

Abstract:

Epitaxial graphene on silicon carbide (SiC) can easily be grown by thermal decomposition. A well-defined epitaxial interface between graphene and substrate is formed, especially when the silicon face of hexagonal polytypes is employed. It is found that as-grown monolayer graphene with interfacial buffer layer provides perfectly ohmic contacts to n-type SiC – even to low-doped epitaxial layers without contact implantation. Contact resistances to highly doped samples are competitive with conventional annealed nickel (Ni) contacts; a direct comparison of Ni and graphene contacts on 4H-SiC resulted in an one order of magnitude reduction of the contact resistance in the case of graphene contacts. On highly doped 6H-SiC, a specific contact resistance as low as ρ_C = 5.9·10^-6 Ωcm² was found. This further improvement compared to 4H-SiC is assigned to better matching of work functions at the Schottky-like interface.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

933-936

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.933

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Online since:

June 2015

Authors:

Stefan Hertel, Andreas Finkler, M. Krieger*, Heiko B. Weber

Keywords:

Epitaxial Graphene, Ohmic Contact, Transfer Length Method

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