Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Andreas Hürner; Luigi di Benedetto; Tobias Erlbacher; Heinz Mitlehner; Anton J. Bauer; Lothar Frey

doi:10.4028/www.scientific.net/MSF.821-823.656

Paper Titles

Observation and Analysis of a Non-Uniform Avalanche Phenomenon in 4H-SiC 4°-Off (0001) p-n Diodes Terminated with a Floating-Field Ring
p.640

4H-SiC P⁺N UV Photodiodes for Space Applications
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Characterization of 4H-SiC pn Structures with Unstable Excess Current
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The Impact of Interface Charge on the Breakdown Voltage of Terminated 4H-SiC Power Devices
p.652

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC
p.656

Industrial Approach for Next Generation of Power Devices Based on 4H-SiC
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Proton and Electron Irradiation in Oxynitrided Gate 4H-SiC MOSFET: A Recent Open Issue
p.667

Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs
p.673

Bias-Temperature-Stress Response of Commercially-Available SiC Power MOSFETs
p.677

HomeMaterials Science ForumMaterials Science Forum Vols. 821-823Robust Double-Ring Junction Termination Extension...

Robust Double-Ring Junction Termination Extension Design for High Voltage Power Semiconductor Devices Based on 4H-SiC

Abstract:

In this study, a new robust double-ring junction-termination-extension (DR-JTE) for high-voltage pn-diodes is presented and analyzed using numerical simulations. As figured out, the DR-JTE reduces the electrical field at both, the edge of the single-JTE region and the MESA-transition, respectively. Thereby, due to the reduction of the electrical field, the maximum breakdown voltage is increased to 91.5% of the theoretical, parallel-plane breakdown voltage of 6.5kVand the maximum acceptable deviation of the optimum implantations dose is twice than that of the single-JTE structure. Furthermore, due to the internal ring, the MESA-transition is shielded from the electrical field and therefore the breakdown voltage is much less affected by the angle of the MESA.

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Periodical:

Materials Science Forum (Volumes 821-823)

Pages:

656-659

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.821-823.656

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Online since:

June 2015

Authors:

Andreas Hürner*, Luigi di Benedetto, Tobias Erlbacher, Heinz Mitlehner, Anton J. Bauer, Lothar Frey

Keywords:

Double-Ring, Junction Termination Extension (JTE), Simulation

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* - Corresponding Author

References

[1] Meyer, C.; Schroder, S.; De Doncker, R.W., Solid-state circuit breakers and current limiters for medium-voltage systems having distributed power systems, Power Electronics, IEEE Transactions on , vol. 19, no. 5, p.1333, 1340, Sept. (2004).

DOI: 10.1109/tpel.2004.833454

Google Scholar

[2] Ruff, M.; Mitlehner, H.; Helbig, R., SiC devices: physics and numerical simulation, Electron Devices, IEEE Transactions on, vol. 41, no. 6, p.1040, 1054, Jun. (1994).

DOI: 10.1109/16.293319

Google Scholar

[3] Feng, G.; Suda, J.; and Kimoto T., Space-Modulated Junction Termination Extension for Ultrahigh-Voltage p-i-n Diodes in 4H-SiC, IEEE Trans. on Electron Devices, Vol. 59, no. 2, p.414, 418, Feb. (2012).

DOI: 10.1109/ted.2011.2175486

Google Scholar

[4] Nguyen, D.M.; Huang, R.; Phung, L.V.; Planson, D.; Berthou, M.; Godignon, P.; Vergne, B.; and Brosselard, P., Edge termination design improvements for 10kV 4H-SiC bipolar diodes, Material Science Forum, Vols. 740-742, p.609, 612, (2013).

DOI: 10.4028/www.scientific.net/msf.740-742.609

Google Scholar

[5] Niwa, H.; Gan Feng; Suda, J.; Kimoto, T., Breakdown Characteristics of 15-kV-Class 4H-SiC PiN Diodes With Various Junction Termination Structures, Electron Devices, IEEE Transactions on, vol. 59, no. 10, p.2748, 2752, Oct. (2012).

DOI: 10.1109/ted.2012.2210044

Google Scholar

[6] Bellone, S.; and Di Benedetto, L., Design and Performances of 4H-SiC Bipolar Mode Field Effect Transistor (BMFETs), IEEE Trans. on Power Electronics, Vol. 29, no. 5, p.2174, 2179, May (2014).

DOI: 10.1109/tpel.2013.2281781

Google Scholar

[7] Peters D., et al., 2010, Materials Science Forum, Vols. 645-648, p.901, 904, (2010).

Google Scholar

[8] Kinoshita K. et al., Proceedings of ISPDSD & IC 2002, pp.253-256, (2002).

Google Scholar