Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

Nikolaos Tsavdaris; Kanaparin Ariyawong; Odette Chaix-Pluchery; Jean Marc Dedulle; Eirini Sarigiannidou; Didier Chaussende

doi:10.4028/www.scientific.net/MSF.778-780.13

Paper Titles

Preface, Committees, Sponsors and Overview

Real-Time Measurement of the Evolution of Growth Facets during SiC PVT Bulk Growth Using 3-D X-Ray Computed Tomography
p.9

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation
p.13

Development of RAF Quality 150mm 4H-SiC Wafer
p.17

Impurity Behavior of High Purity SiC Powder during SiC Crystal Growth
p.22

Effect of TaC-Coated Crucible on SiC Single Crystal Growth
p.26

Interaction between Vapor Species and Graphite Crucible during the Growth of SiC by PVT
p.31

Comparison of Thermodynamic Databases for the Modeling of SiC Growth by PVT
p.35

HomeMaterials Science ForumMaterials Science Forum Vols. 778-780Effect of Facet Occurrence on Polytype...

Effect of Facet Occurrence on Polytype Destabilization during Bulk Crystal Growth of SiC by Seeded Sublimation

Abstract:

We report on polytype destabilization during bulk crystal growth of Silicon Carbide by seeded sublimation method. Polytype transitions are experimentally obtained and a thermodynamic analysis using classical 2D nucleation theory is used towards the understanding of the experimental results. Whether it is a thin lamella or an inclusion, it is found that the polytype transitions systematically occur on the (0001) facet. This suggests that the polytype switch takes place through classical 2D nucleation at the facet. We will show that two criteria must be fulfilled for the occurrence of a foreign polytype: i) minimization of nucleation energy and ii) presence of a facet. This is directly depending on the crystal shape (convex or concave) and its evolution with growth time.

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Silicon Carbide and Related Materials 2013

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Periodical:

Materials Science Forum (Volumes 778-780)

Pages:

13-16

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.778-780.13

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Online since:

February 2014

Authors:

Nikolaos Tsavdaris*, Kanaparin Ariyawong, Odette Chaix-Pluchery, Jean Marc Dedulle, Eirini Sarigiannidou, Didier Chaussende

Keywords:

2D Nucleation, Bulk SiC, Crystal Shape, Facet, PVT

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* - Corresponding Author

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