Complex Study of SiC Epitaxial Films
p.593
p.593
Contact-Free Micropipe Reactions in Silicon Carbide
p.597
p.597
Conversion of Basal Plane Dislocations to Threading Edge Dislocations by Annealing 4H-SiC Epilayers at High Temperatures
p.601
p.601
Dielectric Properties of Thermally Grown SiO2 on 4H-SiC(0001) Substrates
p.605
p.605
Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
p.609
p.609
Effects of Al Ion Implantation on 3C-SiC Crystal Structure
p.613
p.613
Electrical Characterisation of Epitaxially Grown 3C-SiC Films
p.617
p.617
Electrical Properties of MOS Structures on 4H-SiC (11-20) Face
p.621
p.621
Electrophysical and Optical Properties of 4H-SiC Irradiated with Xe Ions
p.625
p.625
Edge Termination Design Improvements for 10 kV 4H-SiC Bipolar Diodes
Abstract:
10 kV class 4H-SiC bipolar diodes have been fabricated. Two different edge terminations (Mesa/JTE or MESA/JTE with JTE rings) with two different junction bend radius have been designed and tested. Measurement results show that the inclusion of JTE rings improve the edge termination efficiency. The measurements indicate also a better reverse performance of diodes with larger bend radius.
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Info:
Periodical:
Materials Science Forum (Volumes 740-742)
Pages:
609-612
Citation:
Online since:
January 2013
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