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Comparison of Electrical Behavior of GaN-Based MOS Structures Obtained by Different PECVD Process

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Abstract:

MOS SiO2/GaN structures were fabricated with different surface preparation and different PECVD processes for the dielectric thin film deposition (ECR-PECVD and ICP-PECVD in continuous and pulsed modes). On the basis of C-V curves, the surface preparation steps, involving chemical etching with BOE, UV-Ozone oxidation and oxygen plasma oxidation, were compared in terms of resulting effective charge and interface trap density. A good SiO2/GaN interface quality was achieved for N-type MOS capacitances obtained both with continuousICPPECVD and ECR-PECVD deposition of the SiO2 dielectric. However, the interface quality is greatly reduced for MOS capacitors fabricated on P-type GaN.

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Info:

Periodical:

Materials Science Forum (Volume 711)

Pages:

228-232

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.711.228

Citation:

Cite this paper

Online since:

January 2012

Authors:

Elias Al Alam, Ignasi Cortés, T. Begou, Antoine Goullet, Frederique Morancho, Alain Cazarré, P. Regreny, J. Brault, Yvon Cordier, Marie Paule Besland, K. Isoird

Keywords:

Continuous PECVD, ECR-PECVD, Gallium Nitride (GaN), Plasma Oxidation, Pulsed-PECVD

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