Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy

Makoto Yamaguchi; M. Fujitsuka; S. Ueno; I. Miura; W. Erikawa; Takuro Tomita

doi:10.4028/www.scientific.net/MSF.645-648.551

Paper Titles

Crystalline Quality of Channel Regions in SiC Buried Gate Static Induction Transistors (SiC-BGSITs)
p.535

Study of the Evolution of Basal Plane Dislocations during Epitaxial Growth: Role of the Surface Kinetics
p.539

Experimental Verification of the Cluster Effect on Giant Step Bunching on 4H-SiC (0001) Surfaces
p.543

Modal Composition of the SiC Surface Electromagnetic Response to the External Radiation at Lattice Resonant Frequency
p.547

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy
p.551

Single Shockley Faults Enlargement during Micro-Photoluminescence Defects Mapping
p.555

Characterization of Defects in Semi-Insulating 6H-SiC Substrates Using IR Thermal Imaging Camera
p.559

Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates
p.565

Growth Rate and Thickness Uniformity of Epitaxial Graphene
p.569

HomeMaterials Science ForumMaterials Science Forum Vols. 645-648Study of Indentation Damage in Single Crystal...

Study of Indentation Damage in Single Crystal Silicon Carbide by Using Micro Raman Spectroscopy

Abstract:

Raman spectroscopic study is carried on the Vickers indented area on the surface of a single crystal silicon carbide (4H- and 6H-SiC) as a nondestructive structure probe to investigate a residual stress and crystal structure. LO phonon frequency shifts and the broad and weak bands around LO phonon band were observed. The residual strain field around the indentation is discussed.

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Materials Science Forum (Volumes 645-648)

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551-554

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.645-648.551

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Online since:

April 2010

Authors:

Makoto Yamaguchi, M. Fujitsuka, S. Ueno, I. Miura, W. Erikawa, Takuro Tomita

Keywords:

Indentation, Raman Spectroscopy

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