Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer

Takafumi Tanehira; T. Nakano; Motoi Nakao

doi:10.4028/www.scientific.net/MSF.645-648.1009

Paper Titles

Improved Characteristics of 4H-SiC MISFET with AlON/Nitrided SiO₂ Stacked Gate Dielectrics
p.991

Effect of Doping Concentration in Buried-Channel NMOSFETs on Electrical Properties of 4H-SiC CMOS Devices
p.995

Isotropic Channel Mobility in UMOSFETs on 4H-SiC C-Face with Vicinal Off-Angle
p.999

Comparison of Inversion Layer Electron Transport of Lightly Doped 4H and 6H SiC MOSFETs
p.1005

Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer
p.1009

Current Transient Effect in N-Channel 6H-SiC MOSFET Induced by Heavy Ion Irradiation
p.1013

9 kV, 1 cm² SiC Gate Turn-Off Thyristors
p.1017

Large Area >8 kV SiC GTO Thyristors with Innovative Anode-Gate Designs
p.1021

10 kV, 10 A Bipolar Junction Transistors and Darlington Transistors on 4H-SiC
p.1025

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Electrical Characteristics of MOSFETs Using 3C-SiC with Buried Insulating Layer

Abstract:

Metal oxide semiconductor field effect transistors (MOSFETs) using SiC on insulator (SiC-OI) substrate with the structure of 3C-SiC (100)/SiO2/Si have been fabricated. SiC-OI substrates with SiC thicknesses of 100 nm and 600 nm are employed as starting materials and aluminum ions are implanted for p-regions or channel regions with a multi-implantation technique. Afterward, to form the source and drain regions, phosphorus ions are implanted. The gate oxide layer is grown in dry thermal oxidation, followed by post-oxidation annealing. Nickel is used as a contact material for the source and drain region, and aluminum is used for the gate material. From Id-Vd characteristics, 600 nm SiC-OI MOSFET is superior to 100 nm SiC-OI MOSFET. It is might that the crystalline quality of surface SiC layers affects the performance of MOSFET. SiC-OI MOSFET is operated successfully for the first time.