Defects Identified in SiC and Their Implications

M. Bockstedte; A. Marini; Adam Gali; Oleg Pankratov; A. Rubio

doi:10.4028/www.scientific.net/MSF.600-603.285

Paper Titles

Aspects of Dislocation Behavior in SiC
p.261

Investigation of Defect Formation in 4H-SiC(0001) and (000-1) Epitaxy
p.267

Temperature Dependence of Shockley Stacking Fault Expansion and Contraction in 4H-SiC p-i-n Diodes
p.273

EPR Identification of Defects and Impurities in SiC: To be Decisive
p.279

Defects Identified in SiC and Their Implications
p.285

Atomic and Electronic Structure of the (2×1) and c(2×2) 4H-SiC(1-102) Surfaces
p.291

Sense Determination of c-Axis Screw Dislocations in 4H-SiC
p.297

Studies of the Distribution of Elementary Threading Screw Dislocations in 4H Silicon Carbide Wafer
p.301

High-Resolution Topography Analysis on Threading Edge Dislocations in 4H-SiC Epilayers
p.305

HomeMaterials Science ForumMaterials Science Forum Vols. 600-603Defects Identified in SiC and Their Implications

Defects Identified in SiC and Their Implications

Abstract:

Defect signatures, such as deep level positions, hyperfine parameters, local vibrational modes and optical transitions characterize a defect and enable the identification of defect centers. This identification is a key to an understanding of complex phenomena like the defect kinetics. Albeit density functional theory enabled the identification of several defects and their kinetic properties, a new approach is needed to address the optical excitation of defect. Within a quasiparticle theory and taking into account excitonic effects we analyze the excited states of VC +.