Defect Etching of Non-Polar and Semi-Polar Faces in SiC

Sakwe Aloysius Sakwe; Yeon Suk Jang; Peter J. Wellmann

doi:10.4028/www.scientific.net/MSF.556-557.243

Paper Titles

An X-Ray Topographic Analysis of the Crystal Quality of Globally Available SiC Wafers
p.227

Behavior of Basal Plane Dislocations and Low Angle Grain Boundary Formation in Hexagonal Silicon Carbide
p.231

Comparative Investigation between X-Ray Diffraction and Cross Polarization Mapping of 4H-SiC Wafers Off-Cut 4° Towards (11-20)
p.235

Defect and Growth Analysis of SiC Bulk Single Crystals with High Nitrogen Doping
p.239

Defect Etching of Non-Polar and Semi-Polar Faces in SiC
p.243

Dislocation in 4H n⁺ SiC Substrates and their Relationship with Epilayer Defects
p.247

Distinction of the Nuclei of Shockley Faults in 4H-SiC{0001} pin Diodes by Electroluminescence Imaging
p.251

Epitaxial Growth on Metal Bonded SiC Substrates: Transmission Electron Microscopy and Photoluminescence
p.255

Impact of n-Type versus p-Type Doping on Mechanical Properties and Dislocation Evolution during SiC Crystal Growth
p.259

HomeMaterials Science ForumMaterials Science Forum Vols. 556-557Defect Etching of Non-Polar and Semi-Polar Faces...

Defect Etching of Non-Polar and Semi-Polar Faces in SiC

Abstract:

Wet chemical etching using molten KOH is the most frequently applied method to reveal structural defects in SiC. Until now etching kinetics of SiC in planes different from the polar cplane has not been reported. In this paper we report on defect etching of SiC in non-polar faces. Using a calibrated KOH defect-etching furnace with possibilities to set accurate etching temperatures we have etched SiC samples of various orientations to (i) study defect occurrence and their morphologies (ii) set KOH defect etching parameters for SiC for these orientations and (iii) investigate etching kinetics in relation to anisotropy/surface polarity. For non-polar planes of the same orientations a comparison in etching kinetics and defect morphologies in crystals grown in different directions is presented.

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Periodical:

Materials Science Forum (Volumes 556-557)

Pages:

243-246

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.556-557.243

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Online since:

September 2007

Authors:

Sakwe Aloysius Sakwe, Yeon Suk Jang, Peter J. Wellmann

Keywords:

Activation Energy, Etching, Etching Kinetics, Surface Polarity, Surface Potential

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