Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy

Takuro Tomita; Shigeki Matsuo; Tatsuya Okada; Tsunenobu Kimoto; Takeshi Mitani; Shinichi Nakashima

doi:10.4028/www.scientific.net/MSF.527-529.339

Paper Titles

Multi-Scale Simulation of MBE-Grown SiC/Si Nanostructures
p.315

Theory of Dislocations in SiC: The Effect of Charge on Kink Migration
p.321

Structure of Carrot Defects in 4H-SiC Epilayers
p.327

Characterization of SiC Crystals by Using Deep UV Excitation Raman Spectroscopy
p.333

Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy
p.339

Raman Scattering Analyses of Stacking Faults in 3C-SiC Crystals
p.343

Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC
p.347

Stacking Faults and 3C Quantum Wells in Hexagonal SiC Polytypes
p.351

Silicon Carbide: A Playground for 1D-Modulation Electronics
p.355

HomeMaterials Science ForumMaterials Science Forum Vols. 527-529Structures of Comets in a Homoepitaxially Grown...

Structures of Comets in a Homoepitaxially Grown 4H-SiC Film Studied by DUV Micro-Raman Spectroscopy

Abstract:

Deep-ultraviolet (DUV) micro-Raman spectroscopy was applied to study the micro structures of surface defects in a 4H-SiC homoepitaxially grown film. From DUV Raman spectrum, inclusions of 3C-SiC was found in comet defects. The shape of 3C-structure in comets was investigated and it was found that 3C inclusions in comets can be classified into two types. In addition, spectrum broadening due to the coupling of nonfolded longitudinal optical phonon mode and the photo-excited carriers was also found. The formation mechanisms of 3C inclusion in comets were discussed.