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HomeMaterials Science ForumMaterials Science Forum Vols. 433-436Seeded PVT Growth of Aluminum Nitride on Silicon...

Seeded PVT Growth of Aluminum Nitride on Silicon Carbide

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Silicon Carbide and Related Materials - 2002

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Periodical:

Materials Science Forum (Volumes 433-436)

Pages:

983-986

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.433-436.983

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Online since:

September 2003

Authors:

Boris M. Epelbaum, Matthias Bickermann, Albrecht Winnacker

Keywords:

AlN Seeded Growth, Aluminum Nitride (AlN), A-Plane Growth, SiC Seeds for AlN, SiC Substrate Orientation

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[1] L. J Schowalter, J.C. Rojo, G.A. Slack, Y. Shusterman, R. Wang, I. Bhat, G. Arzunmozhi, J. Cryst. Growth 211 (2000), p.78.

[2] G.A. Slack, T.F. McNelly, J. Cryst. Growth 34 (1976), p.263.

[3] C.M. Balkas, Z. Sitar, T. Zheleva, L. Bergmann, R. Nemanich, R.F. Davis, J. Cryst. Growth 179 (1997), p.363.

[4] L. Liu, B. Liu, Y. Shi and J.H. Edgar, MRS Internet J. Nitride Semicond. Res. 6, 7 (2001).

[5] R. Schlesser, Z. Sitar, J. Cryst. Growth 234 (2002), p.349.

[6] R. Schlesser, R. Dalmau, Z. Sitar, J. Cryst. Growth 241 (2002), p.416.

[7] B. Epelbaum, D. Hofmann, M. Bickermann, A. Winnacker, Mater. Sci. Forum 389-393 (2002), p.1445.

[8] W.L. Sarney, L. Salamanca-Riba, T. Hossain, P. Zhou, H.N. Jayatirtha, H.H. Kang, R.D. Vispute, M. Spencer, K. Jones, MRS Internet J. Nitride Semicond. Res. 5S1, W5. 5 (2000).

DOI: 10.1557/s1092578300004543

[9] G.A. Slack, Mat. Res. Soc. Symp. Proc. 512 (1998), p.35.

[10] P.M. Dryburgh, J. of Crystal Growth 125 (1992), p.65.

[11] S.K. Lilov, Mater. Sci. Eng. B 21 (1993), p.65.

[12] J.A. Lely, Ber. Dt. Keram. Ges. 8 (1955), p.229 Fig. 3. SEM pictures of cleaved surfaces through the SiC substrate and PVT grown AlN layer. A corresponds to A and B in Fig. 2, B corresponds to D in Fig. 2.