Surface Control of 4H-SiC MESFETs
p.1387
p.1387
Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC
p.1391
p.1391
Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
p.1395
p.1395
4H-SiC MESFET Large-Signal Modeling Using Modified Materka Model
p.1399
p.1399
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
p.1403
p.1403
The Development of Ultra-High Frequency Power 6H-SiC Vertical Static Induction Transistor with p-n Junction as a Gate
p.1407
p.1407
Silicon Carbide Microwave Limiters
p.1411
p.1411
MISiCFET Chemical Gas Sensors for High Temperature and Corrosive Environment Applications
p.1415
p.1415
The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures
p.1419
p.1419
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1403-1406
Citation:
Online since:
April 2002
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