Hot-Carrier Luminescence in 4H-SiC MESFETs
p.1371
p.1371
High-Performance Silicon Carbide MESFET Utilizing Lateral Epitaxy
p.1375
p.1375
Influence of Gate Finger Width on RF Characteristics of 4H-SiC MESFET
p.1379
p.1379
Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance
p.1383
p.1383
Surface Control of 4H-SiC MESFETs
p.1387
p.1387
Characteristics of MESFETs Made by Ion-Implantation in Bulk Semi-Insulating 4H-SiC
p.1391
p.1391
Evaluation of SiC MESFET Structures Using Large-Signal Time-Domain Simulations
p.1395
p.1395
4H-SiC MESFET Large-Signal Modeling Using Modified Materka Model
p.1399
p.1399
Compatibility of VJFET Technology with MESFET Fabrication and Its Interest for System Integration: Fabrication of 6H and 4H-SiC 110 V Lateral MESFET
p.1403
p.1403
Surface Control of 4H-SiC MESFETs
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 389-393)
Pages:
1387-1390
Citation:
Online since:
April 2002
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