Surface Morphology of 4H-SiC Inclined towards <1100> and <1120> Grown by APCVD Using the Si2Cl6+C3H8 System
p.139
p.139
Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates
p.143
p.143
SiC Polytype Transformation on the Growth Surface
p.147
p.147
Improvement of the 3C-SiC/Si Interface by Flash Lamp Annealing
p.151
p.151
How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
p.155
p.155
Growth of 3C-SiC on Si by Low Temperature CVD
p.159
p.159
Growth of SiC on Si(100) by Low-Pressure MOVPE
p.163
p.163
The Microstructure and Surface Morphology of Thin 3C-SiC Films Grown on (100) Si Substrates Using an APCVD-Based Carbonization Process
p.167
p.167
A Comparison of SiO2 and Si3N4 Masks for Selective Epitaxial Growth of 3C-SiC Films on Si
p.171
p.171
How to Grow Unstrained 3C-SiC Heteroepitaxial Layers on Si (100) Substrates
Abstract:
You might also be interested in these eBooks
Info:
Periodical:
Materials Science Forum (Volumes 353-356)
Pages:
155-158
Citation:
Online since:
January 2001
Keywords:
Price:
Permissions: