Domain Occurance in SiC Epitaxial Layers Grown by Sublimation
p.151
p.151
Epitaxy of High Quality SiC Layers by CST
p.155
p.155
Wetting Properties and Interfacial Energies in Liquid Phase Growth of α-SiC
p.159
p.159
High Quality 6H- and 4H-SiC pn Structures with Stable Electric Breakdown Grown by Liquid Phase Epitaxy
p.163
p.163
Thick Film SiC Epitaxy for 'Filling Up' Micropipes
p.167
p.167
A New Radiation Heated 4 Inch LPCVD System for β-SiC Heteroepitaxy
p.171
p.171
Epitaxial Growth in 3C-SiC without Carbonization Process Using 1,3-Disilabutane
p.175
p.175
Growth and Characterization of SiC Films on Large-Area Si Wafers by APCVD - Temperature Dependence
p.179
p.179
CVD Growth Mechanism of 3C-SiC on Si Substrates
p.183
p.183
Thick Film SiC Epitaxy for 'Filling Up' Micropipes
Abstract:
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Info:
Periodical:
Materials Science Forum (Volumes 264-268)
Pages:
167-170
Citation:
Online since:
February 1998
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