Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

Peter J. Wellmann; Philipp Schuh; Manuel Kollmuss; Michael Schöler; Johannes Steiner; Marcin Zielinski; Marco Mauceri; Francesco La Via

doi:10.4028/www.scientific.net/MSF.1004.113

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Corona Assisted Tuning of Gallium Oxide Growth on 3C-SiC(111)/Si(111) Pseudosubstrates
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Analysis of Defect-Free Hot Filament CVD-Grown 3C-SiC
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HomeMaterials Science ForumMaterials Science Forum Vol. 1004Prospects of Bulk Growth of 3C-SiC Using...

Prospects of Bulk Growth of 3C-SiC Using Sublimation Growth

Abstract:

Free standing 3C-SiC wafers with a dimeter of 50 mm and a thickness of ca. 0.8 mm have been grown on a regular base using 3C-SiC CVD seed transfer from Si wafers to a poly-SiC-carrier and a sublimation epitaxy configuration. Up to the thickness of almost 1 mm, stable growth conditions of the cubic polytype have been achieved. The high supersaturation was kept stable by the proper design of the hot zone that enables a high axial temperature gradient at the growth interface. The Sirich gas phase was realized by the application of a Tantalum getter that was integrated into the graphitebased growth cell. Furthermore, an adaption of the growth setup allowed the growth of 3C material with a diameter of 95 mm and bulk material up to 3 mm on 25 mm diameter. Computer simulations were used to determine the supersaturation of the growth setup for different source-to-seed distances. The minimum supersaturation necessary for stable growth of cubic SiC was found to be higher 0.1 for seed already containing the required 3C polytype.

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Periodical:

Materials Science Forum (Volume 1004)

Pages:

113-119

DOI:

https://doi.org/10.4028/www.scientific.net/MSF.1004.113

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Online since:

July 2020

Authors:

Peter J. Wellmann*, Philipp Schuh, Manuel Kollmuss, Michael Schöler, Johannes Steiner, Marcin Zielinski, Marco Mauceri, Francesco La Via

Keywords:

3C-SiC, Bulk, Large-Area, Sublimation Epitaxy, Supersaturation

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