Modeling of the Boron Emitter Formation Process from BCl3 Diffusion for N-Type Silicon Solar Cells Processing

Jimmy Armand; Cyril Oliver; F. Martinez; B. Semmache; M. Gauthier; Alain Foucaran; Yvan Cuminal

doi:10.4028/www.scientific.net/AMR.324.261

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HomeAdvanced Materials ResearchAdvanced Materials Research Vol. 324Modeling of the Boron Emitter Formation Process...

Modeling of the Boron Emitter Formation Process from BCl₃ Diffusion for N-Type Silicon Solar Cells Processing

Abstract:

This work is devoted to the study of boron doping diffusion process for n-type silicon solar cells applications. Deposition temperature is an important parameter in the diffusion process. In this paper we investigate its influence using an industrial scale furnace [1] (LYDOPTM Boron), which is developed by Semco Engineering. We especially used a numerical model (Sentaurus) in order to further understand the boron diffusion mechanism mainly with respect of the diffusion temperature. The model calibration is based on boron concentration profiles obtained by SIMS (Secondary Ion Mass Spectrometry) analysis. We observed that the boron profiles could be correctly simulated by a single fitting parameter. This parameter, noted kBoron which is connected to the chemical reaction kinetics developed at the interface between the boron silicon glass (BSG) and the silicon substrate

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Periodical:

Advanced Materials Research (Volume 324)

Pages:

261-264

DOI:

https://doi.org/10.4028/www.scientific.net/AMR.324.261

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Cite this paper

Online since:

August 2011

Authors:

Jimmy Armand, Cyril Oliver, F. Martinez, B. Semmache, M. Gauthier, Alain Foucaran, Yvan Cuminal

Keywords:

BCL₃ Source, Boron Diffusion Modeling, n-Type Emitter

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References

[1] C. Oliver, B. Semmache, Y. Cuminal, A. Foucaran, M. Gauthier, and Y. Pellegrin. "Implementation of boron emitters using BCl3 diffusion process for industrial silicon solar cells fabrication", 25th European Photovoltaic Solar Energy Conference and Exhibition.

DOI: 10.4028/www.scientific.net/amr.324.261

Google Scholar

[2] Y. Tiantian, L. Hongbo, Z. Mengyan, and C. Mingbo, "Fabrication of Large-Area Boron Backfield Silicon Solar Cells," Proceedings of ISES World Congress 2007 (Vol. I – Vol. V), Springer Berlin Heidelberg, 2009, pp.1167-1169.

DOI: 10.1007/978-3-540-75997-3_232

Google Scholar

[3] Y. Komatsu, V. Mihailetchi, L. Geerligs, B. van Dijk, J. Rem, and M. Harris, "Homogeneous p+ emitter diffused using boron tribromide for record 16.4 screen-printed large area n-type mc-Si solar cell", Solar Energy Materials and Solar Cells, vol. 93,Juin. 2009, pp.750-752.

DOI: 10.1016/j.solmat.2008.09.019

Google Scholar

[4] B. Baccus, T. Wada, N. Shigyo, M. Norishima, H. Nakajima, K. Inou, T. Iinuma and H. Iwai, "A study of nonequilibrium diffusion modeling – Applications to rapid thermal annealing and advanced bipolar technologies", IEEE Trans. Electron Devices, Vol. 39, 1992, pp.648-661.

DOI: 10.1109/16.123491

Google Scholar

[5] E. de Frésart, S. S. RheeVeschetti, and K. L. Wang, "Boron oxide interaction in silicon molecular beam epitaxy", Applied Physics Letters, Vol. 49, 1986, pp.847-849.

DOI: 10.1063/1.97513

Google Scholar

[6] R. M. Ostrom and F. G. Allen, "Boron doping in Si molecular beam epitaxy by co‐evaporation of B2O3 or doped silicon", Applied Physics Letters, Vol 48, 1986, p.221.

DOI: 10.1063/1.96801

Google Scholar