Hydrogen Gettering within Processed Oxygen-Implanted Silicon
p.35
p.35
Gate Control of Junction Impact Ionization Avalanche in SOI MISFETs: Theoretical Model
p.43
p.43
Semi-Analytical Models of Field-Effect Transistors with Low-Dimensional Channels
p.51
p.51
Model of Nonuniform Channel for the Charge Carrier Transport in Nanoscale FETs
p.59
p.59
High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
p.67
p.67
Some Issues of Modeling the Double Barrier Metal-Oxide-Semiconductor Tunnel Structures
p.77
p.77
Electrical Properties of High-K LaLuO3 Gate Oxide for SOI MOSFETs
p.87
p.87
Effects of High–Energy Neutrons on Advanced SOI MOSFETs
p.95
p.95
Polysilicon on Insulator Structures for Sensor Application at Electron Irradiation & Magnetic Fields
p.109
p.109
High Temperature Effects on Harmonic Distortion in Submicron SOI Graded-Channel MOSFETs
Abstract:
The effect of elevated temperature on the harmonic distortion in Graded-Channel MOSFETs is presented in this work. The Graded-Channel devices show interesting advantages in terms of nonlinear behavior compared to classical devices especially at higher temperatures up to 200°C.
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Info:
Periodical:
Advanced Materials Research (Volume 276)
Pages:
67-75
Citation:
Online since:
July 2011
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