Modulus and Internal Friction of W-Doped VO2 Thin Films

H.Q. Li; X.X. He; T. Liu; Z.H. Nie; X.Q. Lv

doi:10.4028/www.scientific.net/AMM.130-134.3343

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HomeApplied Mechanics and MaterialsApplied Mechanics and Materials Vols. 130-134Modulus and Internal Friction of W-Doped VO2 Thin...

Modulus and Internal Friction of W-Doped VO₂ Thin Films

Abstract:

The thin films of W-doped VO₂ were synthesized onto Mo substrates using reactive DC and RF magnetic co-sputtering deposition techniques. The effects of W dopant on the semiconductor to metal phase transition of bare VO₂ were investigated with measuring X-ray diffraction (XRD) , QJ31Wheatstone Bridge and the internal friction and modulus vs temperature. The transition temperatures of VO₂thin film from monoclinic semiconductor to tetragonal metal are decreased from 68°C to 40°C with the curves of resistance vs temperature and modulus vs temperature. In addition to, the size of grains W-doped VO₂is more than that of un-doped VO₂, but more smoother.