Abstract
Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.
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Shin, J.C., Lee, A., Kim, H.J. et al. Growth characteristics and electrical properties of diameter-selective InAs nanowires. Journal of the Korean Physical Society 62, 1678–1682 (2013). https://doi.org/10.3938/jkps.62.1678
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DOI: https://doi.org/10.3938/jkps.62.1678