Abstract
In this paper, we report the fabrication of p-type ZnO thin films through co-doping of nitrogen (N) and aluminium (Al). The thin films are fabricated on Si/SiO2 and glass substrates by using the spin-coating method and are further subjected to annealing at different temperatures (300, 400, and 500 °C). The thin films possess transparence above 90% in the visible region, and the calculated band gap value increases with increasing annealing temperature. The current-voltage characteristics of the films show a typical non-linear rectifying behavior. The field-effect transfer characteristics of the prepared films confirm p-type semiconducting property with carrier concentrations of 5.10, 24.39, and 77.97 × 1015 cm−3 and carrier mobilities of 3.765, 1.861, and 3.647 × 102 cm2/V·s for different annealing temperatures. The effects of annealing temperature on the electrical and the optical properties of the p-type ZnO thin films are discussed in detail.
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Saravanakumar, B., Mohan, R. & Kim, SJ. An investigation of the electrical properties of p-type Al:N Co-doped ZnO thin films. Journal of the Korean Physical Society 61, 1737–1741 (2012). https://doi.org/10.3938/jkps.61.1737
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DOI: https://doi.org/10.3938/jkps.61.1737