The Study of the Quantitative Properties of the Alloys Ga0.35 in 0.65 As / InP

The thermal effects on the energy gap and the effect of width of potential well on the quantity properties of hetero-structure nano semiconductors (Ga0.35In0.65As/InP) have been studied. The energy of quantum wells in conductive and valance bands of alloy has been calculated. Then have been calculated effective energies of transition electronics and associated wavelengths within those well. That was noted the energy gap increases due to reducing temperature to very low degrees also noted the emergence of quantum wells whenever reducing width of potential well to nano dimensions. The results showed that there are improvements in the physical properties of the alloy.