2008 年 51 巻 7 号 p. 428-432
We would like to share our recent results from a research on the single electron tunneling effect in a double-barrier tunneling junction (DBTJ) structure. Single Au nanoparticles were trapped in a nanogap electrodes, whose gap size was precisely controlled using a combination of electron beam lithography and molecular ruler technique. Here, we introduce how the novel combination technique was utilized to obtain the nanogap electrode. We also introduce the size effect of Au particles on the single electron tunneling behavior as a Coulomb island. Finally, we introduce the relation between the geometrical and electrical properties of the DBTJ.