Abstract
A new method for generating terahertz radiation by exposure to femtosecond laser pulses on the semiconductor surface is proposed. The essence of this method is that the exciting radiation intensity is subjected to spatial modulation by using a microlens array and by shading a part of the semiconductor surface by metal stripes. This gives rise to a concentration gradient of photo carriers along the surface at the sharp boundary of the metallic coating in the semiconductor (transverse Dember photoelectric effect), and its relaxation for times of ∼1 ps results in the emission of electromagnetic pulses of the terahertz range. A terahertz emitter model based on the proposed method was developed and designed, its efficiency was demonstrated, and methods for increasing its efficiency were considered.
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Original Russian Text © V.D. Antsygin, A.S. Konchenko, V.P. Korol’kov, A.A. Mamrashev, N.A. Nikolaev, O.I. Potaturkin, 2013, published in Avtometriya, 2013, Vol. 49, No. 2, pp. 92–97.
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Antsygin, V.D., Konchenko, A.S., Korol’kov, V.P. et al. Terahertz microlens array emitter based on the transverse Dember cross effect. Optoelectron.Instrument.Proc. 49, 184–188 (2013). https://doi.org/10.3103/S8756699013020118
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DOI: https://doi.org/10.3103/S8756699013020118