A New Positive-working Alkaline developable Photoresist Based on Partially O- tert-butoxycarbonylmethylated- tetra-C-methylcalix[4]resorcinarene and a Photoacid Generator

H. Iimori; Y. Shibasaki; M. Ueda; H. Ishii

doi:10.2494/photopolymer.16.685

A New Positive-working Alkaline developable Photoresist Based on Partially O- tert-butoxycarbonylmethylated- tetra-C-methylcalix[4]resorcinarene and a Photoacid Generator

H. Iimori, Y. Shibasaki, M. Ueda, H. Ishii

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Keywords: g-line lithography, chemical amplified photoresist, photoacid generator, low-molecular amorphous material, partially protection

JOURNAL FREE ACCESS

2003 Volume 16 Issue 5 Pages 685-689

DOI https://doi.org/10.2494/photopolymer.16.685

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Abstract

A new positive-working low-molecular-weight photoresist has been developed. The photoresist consisted of the matrix, tetra-C-methylcalix[4]resorcinarene (p-t-BM-C4-R) in which the OH groups were protected with tert-butoxycarbonylmethyl groups (protecting ratio: 27 ∼ 60%), and a photoacid generator (PAG), 5-(propylsulfonyloxyimino-5H-thiophen-2-ylidene)-2-methylphenyl-acetonitrile (PTMA). The p-t-BM-C4-R (protecting ratio: 40%) containing PTMA (2 wt%) showed a high sensitivity (10 mJ/cm²) and a contrast 11 after the irradiation with g-line, post-exposure baking at 120 °C at 60 sec, and developing with 2.38 wt% tetramethylammonium hydroxide aqueous solution (TMAHaq) at 20 °C for 10 sec.

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