Author(s)

Jiachen Tian

Corresponding Author

Jiachen Tian

ABSTRACT

Due to IGBT (Insulated Gate Bipolar Transistor)'s excellent ability to process electric power，it is widely used in power transformation at present, however, destructions of IGBT have reached by 60 percent due to the rise of IGBT’s junction temperature. On the one hand, this paper proposes the defect of difference between conduction voltage drop at different driver voltages as a thermal parameter from the angle of static thermal parameter method, and proposes a circuit which uses operational amplifier to achieve voltage reduction while accurately measures the conduction voltage drop; On the other hand, from the angle of dynamic thermal parameter method, this paper uses the amplitude of oscillating voltage generated by the inductor to reflect the change in junction temperature dynamically.

KEYWORDS

Igbt, Conduction Voltage Drop, Oscillating Voltage, Junction Temperature